・Monocrystalline silicon solar ingots
・Monocrystalline silicon ingots (dummy ingots for testing purposes)
・Multicrystalline silicon ingots (for sputtering)
Monocrystalline ingot is grown from silicon using the Czochralski process. High-purity polysilicon is melted down in a quartz crucible. After adding a precise amount of dopant (boron or phosphorus), a seed crystal is dipped into the molten silicon. Pulling out the seed while rotating it allows the silicon to form a single crystal ingot, which can be grown from 1 up to 1.8 meters in length and 6 or 8 inches in diameter.
Our offerings
Solar grade silicon ingots
We offer N type/ P type of Monocrystalline ingots meeting our customers' individual needs.
Technical data
Monocrystalline silicon solar ingots
| N type (dopant; phosphorus) | 5.5”/ 6.5” lifetime >100μsec |
|---|---|
| Oxygen concentration | <0.85*E18atoms/cc |
| Carbon concentration | <3*E16atoms/cc |
| P type (dopant; boron) | 6”/ 8” lifetime >15μsec |
|---|---|
| Oxygen concentration | <1*E18atoms/cc |
| Carbon concentration | <3*E16atoms/cc |
Monocrystalline silicon ingots (dummy)
| N type | 6”/ 8”/ 12” |
|---|---|
| P type | 4”/ 5”/ 6”/ 8”/ 12” |
