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Monocrystalline silicon ingots

Monocrystalline silicon ingots
Monocrystalline ingot is grown from silicon using the Czochralski process. High-purity polysilicon is melted down in a quartz crucible. After adding a precise amount of dopant (boron or phosphorus), a seed crystal is dipped into the molten silicon. Pulling out the seed while rotating it allows the silicon to form a single crystal ingot, which can be grown from 1 up to 1.8 meters in length and 6 or 8 inches in diameter.

・Monocrystalline silicon solar ingots
・Monocrystalline silicon ingots (dummy ingots for testing purposes)
・Multicrystalline silicon ingots (for sputtering)

Our offerings

Solar grade silicon ingots

We offer N type/ P type of Monocrystalline ingots meeting our customers' individual needs.

Technical data

Monocrystalline silicon solar ingots

N type (dopant; phosphorus) 5.5”/ 6.5” lifetime >100μsec
Oxygen concentration <0.85*E18atoms/cc
Carbon concentration <3*E16atoms/cc
P type (dopant; boron) 6”/ 8” lifetime >15μsec
Oxygen concentration <1*E18atoms/cc
Carbon concentration <3*E16atoms/cc

Monocrystalline silicon ingots (dummy)

N type 6”/ 8”/ 12”
P type 4”/ 5”/ 6”/ 8”/ 12”

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